datasheet 2 050-7619 rev b 08/2016 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 4ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 125c) collector cut-of current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-of current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts a na ? symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt75gn60b_s(g) 600 30 155 93 225 225a @ 600v 536 -55 to 175 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current 8 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 175c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy parall eling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coeicient. a built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fa ult. low gate charge simpliies gate drive design and minimizes losses. ? 600v field stop ? trench gate: low v ce(on) ? easy paralleling ? 6s short circuit capability ? intergrated gate resistor: low emi, high reliability applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 600 5.0 5.8 6.5 1.05 1.45 1.85 1.87 25 600 4 g c e t o -247 g c e d 3 pa k g c e (s) (b) apt75gn60b(g)apt75gn60s(g) 600v these devices are sensitive to electrostatic discharge proper handling procedures should be followed. downloaded from: http:///
apt75gn60b_s(g) 3 050-7619 rev 08/2016 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the efect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in igure 21, but with a silicon carbide diode.5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e of is the clamped inductive turn-of energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) 8 continuous current limited by package pin temperature to 100a. microsemi reserves the right to change, without notice, the speciications and information contained herein. thermal and mechanical characteristics unit c/w gm min typ max .28 n/a 5.9 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa scsoa t d(on) t r t d(of) t f e on1 e on2 e of t d(on) t r t d(of) t f e on1 e on2 e of test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 75a t j = 175c, r g = 4.3? 7 , v ge = 15v, l = 100h,v ce = 600v v cc = 600v, v ge = 15v, t j = 125c, r g = 4.3? 7 inductive switching (25c) v cc = 400v v ge = 15v i c = 75a r g = 1.0? 7 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 75a r g = 1.0? 7 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area short circuit safe operating area turn-on delay time current rise time turn-of delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-of switching energy 6 turn-on delay time current rise time turn-of delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-of switching energy 6 6 min typ max 4500 370 150 9.5 485 30 270 225 6 47 48 385 38 2500 3725 2140 47 48 430 55 2600 4525 2585 unit pf v nc a s ns j ns j downloaded from: http:///
apt75gn60b_s(g) 4 050-7619 rev b 08/2016 i c = 75a i c = 37.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 75a i c = 37.5a v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized ) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 160140 120 100 8060 40 20 0 160140 120 100 8060 40 20 0 3.02.5 2.0 1.5 1.0 0.5 0 1.151.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 0 100 200 300 400 500 8 10 12 14 16 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 175 250200 150 100 50 0 1614 12 10 86 4 2 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 200180 160 140 120 100 8060 40 20 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case tempera ture 13 & 15v 9v 8v 7v 10v t j = 25c. 250s pulse test <0.5 % duty cycle i c = 150a i c = 150a t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ge = 15v t j = 175c 11v 12v t j = 175c v ce = 480v v ce = 300v v ce = 120v i c = 75a t j = 25c lead temperatur e limite d lead temperatur e limite d downloaded from: http:///
apt75gn60b_s(g) 5 050-7619 rev 08/2016 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 1.0? l = 100 h switching energy losses (mj) e on2 , turn on energy loss (mj) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (mj) e off , turn off energy loss (mj) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-of delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn of energy loss vs collector cu rrent r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junct ion temperature v ce = 400v v ge = +15v r g = 1.0? r g = 1.0?, l = 100 h, v ce = 400v v ce = 400v t j = 25c , or =125c r g = 1.0? l = 100 h 6050 40 30 20 10 0 200180 160 140 120 100 8060 40 20 0 1614 12 10 86 4 2 0 4035 30 25 20 15 10 50 600500 400 300 200 100 0 9080 70 60 50 40 30 20 10 06 5 4 3 2 1 0 1614 12 10 86 4 2 0 v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v t j = 25c , v ge = 15v t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 1.0? t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 1.0? v ce = 400v v ge = +15v t j = 125c 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 0 10 20 30 40 50 0 25 50 75 100 125 r g = 1.0?, l = 100 h, v ce = 400v e on2, 150a e of, 150a e on2, 75a e of, 75a e on2, 37.5a e of, 37.5a e on2, 150a e of, 150a e on2, 75a e of, 75a e on2, 37.5a e of, 37.5a downloaded from: http:///
apt75gn60b_s(g) 6 050-7619 rev b 08/2016 0.300.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum efective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 7,0001,000 500100 250200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimum switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 10 30 50 70 90 110 130 f max , operating frequency (khz) t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 1.0? 100 5010 51 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : c oes c res c ies 0.0998 0.181 0.00438 0.153 dissipated powe r (watts ) t j (c) t c (c) z ext are the external therma l impedances: case to sink, sink to ambient, etc. set to zero when modeling onl y the case to junction. z ext i c , collector current (a) figure 20, operating frequency vs collector current downloaded from: http:///
apt75gn60b_s(g) 7 050-7619 rev 08/2016 figure 22, turn-on switching waveforms and deinitions figure 23, turn-of switching waveforms and deinitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(of) 10% t f 90% i c a d.u.t. v ce v cc apt75dq60 figure 21, inductive switching test circuit to-247 (b) package outline dimensions in millimeters (inches) 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drai n drai n source gate 5.45 (.215) bsc 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) heat sink (drain)and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drai n (heat sink) 1.98 (.078) 2.08 (.082) gate drai n source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 d 3 pak (s) package outline downloaded from: http:///
microsemi corporation (nasdaq: mscc) ofers a comprehensive portfolio of semiconductor and system sol utions for communications, defense & security, aerospace and industrial markets. products include high-performance and radiatio n-hardened analog mixed-signal integrated circuits, fpgas, socs and asics; power management products; timing and synchronization d evices and precise time solu - tions, setting the worlds standard for time; voice processing devices; rf solutions; discrete comp onents; security technologies and scal - able anti-tamper products; ethernet solutions; power-over-ethernet ics and midspans; as well as cust om design capabilities and services. microsemi is headquartered in aliso viejo, calif., and has approximately 3,600 employees globally. l earn more at www.microsemi.com. ?2015 microsemi corporation. all rights reserved. microsemi and the microsemi logo are registered tr ademarks of microsemi corporation. all other trademarks and service marks are the property of their respective owners. microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa: +1 (800) 713-4113 outside the usa: +1 (949) 380-6100 sales: +1 (949) 380-6136 fax: +1 (949) 215-4996email: sales.support@microsemi.com www.microsemi.com microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the application or use of any product or ci rcuit. the products sold hereunder and any other products sold by microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. any performance specifications are believed to be reliable but are not veri- fied, and buyer must conduct and complete all performance and other testing of the products, alone a nd together with, or installed in, any end-products. buyer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the buyers responsibility to independently determine suitability of any products and to test and verify the same. the information provided by microsemi hereunder is provided as is, where is and with all faults, and the entire ri sk associated with such information is entirely with the buyer. microsemi does not grant, explicit- ly or implicitly, to any party any patent rights, licenses, or any other ip rights, whether with reg ard to such information itself or anything described by such information. information provided in th is document is proprietary to microsemi, and microsemi reserves the right to make any changes to the in formation in this document or to any products and services at any time without notice. 050-7619 rev b 08/2016 apt75gn60b_s(g) downloaded from: http:///
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